Købe IPD30N06S215ATMA2 med BYCHPS
Køb med garanti
IPD30N06S215ATMA2
- Varenummer:
- IPD30N06S215ATMA2
- Beskrivelse:
- MOSFET N-CH 55V 30A TO252-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12802 Pieces
- Datablad:
- IPD30N06S215ATMA2.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPD30N06S215ATMA2, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPD30N06S215ATMA2 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 80µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3-11 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 14.7 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 136W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD30N06S215ATMA2DKR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 26 Weeks |
| Producentens varenummer: | IPD30N06S215ATMA2 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1485pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 55V |
| Beskrivelse: | MOSFET N-CH 55V 30A TO252-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 30A (Tc) |
| Email: | [email protected] |
Relaterede dele til IPD30N06S215ATMA2
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
IPD30N06S2L13ATMA4 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
|
IPD30N06S223ATMA1 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
|
IPD30N06S2L-13 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
|
IPD30N06S223ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
|
IPD30N06S2L23ATMA3 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
|
IPD30N06S4L23ATMA1 | Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Forespørgsel |
|
IPD30N06S2-15 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
|
IPD30N06S4L23ATMA2 | Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Forespørgsel |
|
IPD30N06S2L23ATMA1 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
|
IPD30N08S2L-21 | Infineon Technologies | MOSFET N-CH 75V 30A TO252-3 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog