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IPD30N06S223ATMA1
- Varenummer:
- IPD30N06S223ATMA1
- Beskrivelse:
- MOSFET N-CH 55V 30A TO252-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19790 Pieces
- Datablad:
- IPD30N06S223ATMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 50µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 23 mOhm @ 21A, 10V |
| Power Dissipation (Max): | 100W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD30N06S2-23 IPD30N06S2-23-ND SP000252166 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPD30N06S223ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 901pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 55V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3 |
| Afløb til Source Voltage (VDSS): | 55V |
| Beskrivelse: | MOSFET N-CH 55V 30A TO252-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 30A (Tc) |
| Email: | [email protected] |
Relaterede dele til IPD30N06S223ATMA1
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IPD30N06S2-15 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
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IPD30N06S223ATMA2 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
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IPD30N06S2L13ATMA4 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
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IPD30N06S2L23ATMA3 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
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IPD30N06S2L23ATMA1 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 | Forespørgsel |
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IPD30N06S4L23ATMA2 | Infineon Technologies | MOSFET N-CH 60V 30A TO252-3 | Forespørgsel |
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IPD30N08S2L-21 | Infineon Technologies | MOSFET N-CH 75V 30A TO252-3 | Forespørgsel |
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