Købe IPD50R800CE med BYCHPS
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Vgs (th) (Max) @ Id: | 3.5V @ 130µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO252-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 1.5A, 13V |
Power Dissipation (Max): | 40W (Tc) |
Emballage: | Original-Reel® |
Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andre navne: | IPD50R800CEDR IPD50R800CEDR-ND |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPD50R800CE |
Inputkapacitans (Ciss) (Max) @ Vds: | 280pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 12.4nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | Super Junction |
Udvidet beskrivelse: | N-Channel 500V 5A (Tc) 40W (Tc) Surface Mount PG-TO252-3 |
Afløb til Source Voltage (VDSS): | 500V |
Beskrivelse: | MOSFET N CH 500V 5A TO252 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 5A (Tc) |
Email: | [email protected] |