Købe IPD60R650CEBTMA1 med BYCHPS
Køb med garanti
| Vgs (th) (Max) @ Id: | 3.5V @ 200µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | CoolMOS™ CE |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.4A, 10V |
| Power Dissipation (Max): | 82W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | SP001369530 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPD60R650CEBTMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 7A (Tc) 82W (Tc) Surface Mount PG-TO252-3 |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 7A TO252 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7A (Tc) |
| Email: | [email protected] |