Købe IPD65R600C6BTMA1 med BYCHPS
Køb med garanti
IPD65R600C6BTMA1
- Varenummer:
- IPD65R600C6BTMA1
- Beskrivelse:
- MOSFET N-CH 650V 7.3A TO252
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19869 Pieces
- Datablad:
- IPD65R600C6BTMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPD65R600C6BTMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPD65R600C6BTMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 210µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.1A, 10V |
| Power Dissipation (Max): | 63W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD65R600C6 IPD65R600C6-ND IPD65R600C6TR-ND SP000745020 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPD65R600C6BTMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 7.3A TO252 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.3A (Tc) |
| Email: | [email protected] |
Relaterede dele til IPD65R600C6BTMA1
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
IPD65R600C6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252 | Forespørgsel |
|
IPD65R600E6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | Forespørgsel |
|
IPD65R660CFDBTMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252 | Forespørgsel |
|
IPD65R660CFDAATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Forespørgsel |
|
IPD65R600E6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | Forespørgsel |
 |
IPD65R600C6ATMA1 | Infineon Technologies | LOW POWER_LEGACY | Forespørgsel |
|
IPD65R650CEATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.1A TO252 | Forespørgsel |
|
IPD65R650CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V 7A TO-252 | Forespørgsel |
|
IPD65R660CFDATMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252 | Forespørgsel |
|
IPD65R380C6BTMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog