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IPD65R650CEATMA1
- Varenummer:
- IPD65R650CEATMA1
- Beskrivelse:
- MOSFET N-CH 650V 10.1A TO252
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16414 Pieces
- Datablad:
- IPD65R650CEATMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 0.21mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Power Dissipation (Max): | 86W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | SP001295798 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPD65R650CEATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | Super Junction |
| Udvidet beskrivelse: | N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3 |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 10.1A TO252 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10.1A (Tc) |
| Email: | [email protected] |
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