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Vgs (th) (Max) @ Id: | 4V @ 230µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO262-3 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 80A, 10V |
Power Dissipation (Max): | 300W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andre navne: | IPI120N04S3-02 IPI120N04S3-02-ND IPI120N04S302 SP000261225 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPI120N04S302AKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 14300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 40V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3 |
Afløb til Source Voltage (VDSS): | 40V |
Beskrivelse: | MOSFET N-CH 40V 120A TO262-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 120A (Tc) |
Email: | [email protected] |