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IPP048N12N3 G
- Varenummer:
- IPP048N12N3 G
- Beskrivelse:
- MOSFET N-CH 120V 100A TO220-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15800 Pieces
- Datablad:
- IPP048N12N3 G.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 230µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO220-3-1 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 100A, 10V |
| Power Dissipation (Max): | 300W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | IPP048N12N3G IPP048N12N3GXKSA1 SP000652734 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | IPP048N12N3 G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 12000pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs: | 182nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 120V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 120V |
| Beskrivelse: | MOSFET N-CH 120V 100A TO220-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
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