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Vgs (th) (Max) @ Id: | 3.5V @ 370µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 5.6A, 10V |
Power Dissipation (Max): | 89W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP50R350CP IPP50R350CPIN IPP50R350CPIN-ND IPP50R350CPXK SP000680940 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | IPP50R350CPXKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1020pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 550V 10A (Tc) 89W (Tc) Through Hole PG-TO220-3-1 |
Afløb til Source Voltage (VDSS): | 550V |
Beskrivelse: | MOSFET N-CH 550V 10A TO220-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10A (Tc) |
Email: | [email protected] |