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Vgs (th) (Max) @ Id: | 3.5V @ 30µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO251-3 |
Serie: | CoolMOS™ CE |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 400mA, 13V |
Power Dissipation (Max): | 18W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
Producentens varenummer: | IPU50R3K0CEBKMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 84pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 500V 1.7A (Tc) 18W (Tc) Through Hole PG-TO251-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 13V |
Afløb til Source Voltage (VDSS): | 500V |
Beskrivelse: | MOSFET N-CH 500V 1.7A TO-251 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.7A (Tc) |
Email: | [email protected] |