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IRF8113TR
- Varenummer:
- IRF8113TR
- Beskrivelse:
- MOSFET N-CH 30V 17.2A 8-SOIC
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 16887 Pieces
- Datablad:
- IRF8113TR.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2.2V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-SO |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 17.2A, 10V |
| Power Dissipation (Max): | 2.5W (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | SP001577648 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IRF8113TR |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2910pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 17.2A 8-SOIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 17.2A (Ta) |
| Email: | [email protected] |
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