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NTMD6601NR2G
- Varenummer:
- NTMD6601NR2G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET 2N-CH 80V 1.1A 8SOIC
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17083 Pieces
- Datablad:
- NTMD6601NR2G.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for NTMD6601NR2G, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til NTMD6601NR2G via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3V @ 250µA |
|---|---|
| Leverandør Device Package: | 8-SOIC |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 215 mOhm @ 2.2A, 10V |
| Strøm - Max: | 600mW |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | NTMD6601NR2G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funktion: | Logic Level Gate |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 80V 1.1A 600mW Surface Mount 8-SOIC |
| Afløb til Source Voltage (VDSS): | 80V |
| Beskrivelse: | MOSFET 2N-CH 80V 1.1A 8SOIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.1A |
| Email: | [email protected] |
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