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Vgs (th) (Max) @ Id: | 950mV @ 250µA |
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Vgs (Max): | ±12V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-SO |
Serie: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.8A, 4.5V |
Power Dissipation (Max): | 5W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
Andre navne: | 1727-7205-2 568-9696-2 568-9696-2-ND 934061118518 PMK50XP,518-ND PMK50XP518 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 2 (1 Year) |
Fabrikantens standard ledetid: | 16 Weeks |
Producentens varenummer: | PMK50XP,518 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1020pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
FET Type: | P-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | P-Channel 20V 7.9A (Tc) 5W (Tc) Surface Mount 8-SO |
Drevspænding (Maks. Rds On, Min Rds On): | 4.5V |
Afløb til Source Voltage (VDSS): | 20V |
Beskrivelse: | MOSFET P-CH 20V 7.9A 8-SOIC |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.9A (Tc) |
Email: | [email protected] |