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R6035KNZ1C9
- Varenummer:
- R6035KNZ1C9
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- NCH 600V 35A POWER MOSFET
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16100 Pieces
- Datablad:
- R6035KNZ1C9.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-247 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 102 mOhm @ 18.1A, 10V |
| Power Dissipation (Max): | 379W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | R6035KNZ1C9TR R6035KNZ1C9TR-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 17 Weeks |
| Producentens varenummer: | R6035KNZ1C9 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 35A (Tc) 379W (Tc) Through Hole TO-247 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | NCH 600V 35A POWER MOSFET |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 35A (Tc) |
| Email: | [email protected] |
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