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Vgs (th) (Max) @ Id: | 5V @ 1mA |
---|---|
Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220FM |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 4.3 Ohm @ 1A, 10V |
Power Dissipation (Max): | 35W (Tc) |
Emballage: | Bulk |
Pakke / tilfælde: | TO-220-3 Full Pack |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 17 Weeks |
Producentens varenummer: | R8002ANX |
Inputkapacitans (Ciss) (Max) @ Vds: | 210pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 12.7nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 800V 2A (Tc) 35W (Tc) Through Hole TO-220FM |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 800V |
Beskrivelse: | MOSFET N-CH 800V 2A TO-220FM |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A (Tc) |
Email: | [email protected] |