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RDD022N60TL
- Varenummer:
- RDD022N60TL
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- MOSFET N-CH 600V CPT
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13688 Pieces
- Datablad:
- RDD022N60TL.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4.7V @ 1mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | CPT3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 6.7 Ohm @ 1A, 10V |
| Power Dissipation (Max): | 20W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | RDD022N60TL |
| Inputkapacitans (Ciss) (Max) @ Vds: | 175pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 2A (Tc) 20W (Tc) Surface Mount CPT3 |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V CPT |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A (Tc) |
| Email: | [email protected] |
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