Købe RJK6002DPH-E0#T2 med BYCHPS
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Vgs (th) (Max) @ Id: | - |
---|---|
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-251 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 6.8 Ohm @ 1A, 10V |
Power Dissipation (Max): | 30W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 16 Weeks |
Producentens varenummer: | RJK6002DPH-E0#T2 |
Inputkapacitans (Ciss) (Max) @ Vds: | 165pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 600V 2A (Ta) 30W (Tc) Through Hole TO-251 |
Afløb til Source Voltage (VDSS): | 600V |
Beskrivelse: | MOSFET N-CH 600V 2A TO251 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A (Ta) |
Email: | [email protected] |