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RJK6015DPM-00#T1
- Varenummer:
- RJK6015DPM-00#T1
- Fabrikant:
- Renesas Electronics America
- Beskrivelse:
- MOSFET N-CH 600V 21A TO3PFM
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18517 Pieces
- Datablad:
- RJK6015DPM-00#T1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | - |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-3PFM |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 10.5A, 10V |
| Power Dissipation (Max): | 60W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-3PFM, SC-93-3 |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | RJK6015DPM-00#T1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2600pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 21A (Ta) 60W (Tc) Through Hole TO-3PFM |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 21A TO3PFM |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 21A (Ta) |
| Email: | [email protected] |
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