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RJK6018DPK-00#T0
- Varenummer:
- RJK6018DPK-00#T0
- Fabrikant:
- Renesas Electronics America
- Beskrivelse:
- MOSFET N-CH 600V 30A TO3P
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13576 Pieces
- Datablad:
- RJK6018DPK-00#T0.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | - |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-3P |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 235 mOhm @ 15A, 10V |
| Power Dissipation (Max): | 200W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-3P-3, SC-65-3 |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | RJK6018DPK-00#T0 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 30A (Ta) 200W (Tc) Through Hole TO-3P |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 30A TO3P |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 30A (Ta) |
| Email: | [email protected] |
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