Købe RN1910FE,LF(CT med BYCHPS
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RN1910FE,LF(CT
- Varenummer:
- RN1910FE,LF(CT
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS 2NPN PREBIAS 0.1W ES6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18732 Pieces
- Datablad:
- RN1910FE,LF(CT.pdf
Introduktion
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specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Leverandør Device Package: | ES6 |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | - |
| Modstand - Base (R1) (Ohms): | 4.7k |
| Strøm - Max: | 100mW |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | SOT-563, SOT-666 |
| Andre navne: | RN1910FE,LF(CB RN1910FELF(CTTR |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | RN1910FE,LF(CT |
| Frekvens - Overgang: | 250MHz |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| Beskrivelse: | TRANS 2NPN PREBIAS 0.1W ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Nuværende - Collector Cutoff (Max): | 100nA (ICBO) |
| Nuværende - Samler (Ic) (Max): | 100mA |
| Email: | [email protected] |
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