Købe SIHG47N65E-GE3 med BYCHPS
Køb med garanti
SIHG47N65E-GE3
- Varenummer:
- SIHG47N65E-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 650V 47A TO-247AC
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13867 Pieces
- Datablad:
- SIHG47N65E-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SIHG47N65E-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SIHG47N65E-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-247AC |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 72 mOhm @ 24A, 10V |
| Power Dissipation (Max): | 417W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 19 Weeks |
| Producentens varenummer: | SIHG47N65E-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 5682pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 273nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-247AC |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 47A TO-247AC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 47A (Tc) |
| Email: | [email protected] |
Relaterede dele til SIHG47N65E-GE3
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
SIHG47N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 47A TO247AC | Forespørgsel |
|
SIHG40N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 40A TO247AC | Forespørgsel |
|
SIHG47N60AE-GE3 | Vishay Siliconix | MOSFET N-CH 600V 43A TO247AC | Forespørgsel |
 |
AOTF7T60PL | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO-220F | Forespørgsel |
 |
STB20N90K5 | STMicroelectronics | N-CHANNEL 900 V, 0.24 OHM TYP., | Forespørgsel |
 |
DMN601WKQ-7 | Diodes Incorporated | MOSFET N-CH 60V 300MA SOT323 | Forespørgsel |
|
SIHG47N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 47A TO247AC | Forespørgsel |
|
SIHG47N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 47A TO247AC | Forespørgsel |
 |
C3M0280090J-TR | Cree/Wolfspeed | MOSFET N-CH 900V 11A | Forespørgsel |
|
SIHG460B-GE3 | Vishay Siliconix | MOSFET N-CH 500V 20A TO-247AC | Forespørgsel |
|
SIHG44N65EF-GE3 | Vishay Siliconix | MOSFET N-CH 650V 46A TO247AC | Forespørgsel |
 |
MCH6431-TL-H | ON Semiconductor | MOSFET N-CH 30V 5A MCPH6 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog