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STH80N10F7-2
- Varenummer:
- STH80N10F7-2
- Fabrikant:
- ST
- Beskrivelse:
- MOSFET N-CH 100V 80A H2PAK-2
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14913 Pieces
- Datablad:
- STH80N10F7-2.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | H²PAK |
| Serie: | DeepGATE™, STripFET™ VII |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 40A, 10V |
| Power Dissipation (Max): | 110W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
| Andre navne: | 497-14980-2 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 22 Weeks |
| Producentens varenummer: | STH80N10F7-2 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3100pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H²PAK |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 80A H2PAK-2 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
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