Købe TK32A12N1,S4X med BYCHPS
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Vgs (th) (Max) @ Id: | 4V @ 500µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220SIS |
Serie: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 13.8 mOhm @ 16A, 10V |
Power Dissipation (Max): | 30W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack, Isolated Tab |
Andre navne: | TK32A12N1,S4X(S TK32A12N1,S4X-ND TK32A12N1S4X |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | TK32A12N1,S4X |
Inputkapacitans (Ciss) (Max) @ Vds: | 2000pF @ 60V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 120V 32A (Tc) 30W (Tc) Through Hole TO-220SIS |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 120V |
Beskrivelse: | MOSFET N-CH 120V 32A TO-220 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 32A (Tc) |
Email: | [email protected] |