Købe TK9A55DA(STA4,Q,M) med BYCHPS
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Vgs (th) (Max) @ Id: | 4V @ 1mA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220SIS |
Serie: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 860 mOhm @ 4.3A, 10V |
Power Dissipation (Max): | 40W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack |
Andre navne: | TK9A55DA(STA4QM) TK9A55DASTA4QM |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 24 Weeks |
Producentens varenummer: | TK9A55DA(STA4,Q,M) |
Inputkapacitans (Ciss) (Max) @ Vds: | 1050pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 550V 8.5A (Ta) 40W (Tc) Through Hole TO-220SIS |
Afløb til Source Voltage (VDSS): | 550V |
Beskrivelse: | MOSFET N-CH 550V 8.5A TO-220SIS |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8.5A (Ta) |
Email: | [email protected] |