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Vgs (th) (Max) @ Id: | 3.5V @ 350µA |
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Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220SIS |
Serie: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 4.6A, 10V |
Power Dissipation (Max): | 30W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack, Isolated Tab |
Andre navne: | TK9A65W,S5X(M TK9A65WS5X |
Driftstemperatur: | 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | TK9A65W,S5X |
Inputkapacitans (Ciss) (Max) @ Vds: | 700pF @ 300V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 650V 9.3A (Ta) 30W (Tc) Through Hole TO-220SIS |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 650V |
Beskrivelse: | MOSFET N-CH 650V 9.3A TO-220SIS |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9.3A (Ta) |
Email: | [email protected] |