Købe IPD65R190C7ATMA1 med BYCHPS
Køb med garanti
Vgs (th) (Max) @ Id: | 4V @ 290µA |
---|---|
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO252-3 |
Serie: | CoolMOS™ C7 |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 5.7A, 10V |
Power Dissipation (Max): | 72W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andre navne: | IPD65R190C7ATMA1TR SP000928648 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 20 Weeks |
Producentens varenummer: | IPD65R190C7ATMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1150pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 650V 13A (Tc) 72W (Tc) Surface Mount PG-TO252-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 650V |
Beskrivelse: | MOSFET N-CH 650V 13A TO-252 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 13A (Tc) |
Email: | [email protected] |