Købe IPI120N10S405AKSA1 med BYCHPS
Køb med garanti
Vgs (th) (Max) @ Id: | 3.5V @ 120µA |
---|---|
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO262-3-1 |
Serie: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 100A, 10V |
Power Dissipation (Max): | 190W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andre navne: | SP001102622 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 14 Weeks |
Producentens varenummer: | IPI120N10S405AKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 6540pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 100V 120A (Tc) 190W (Tc) Through Hole PG-TO262-3-1 |
Afløb til Source Voltage (VDSS): | 100V |
Beskrivelse: | MOSFET N-CH TO262-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 120A (Tc) |
Email: | [email protected] |