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Vgs (th) (Max) @ Id: | 3.5V @ 155µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO-220-3 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.75 mOhm @ 100A, 10V |
Power Dissipation (Max): | 214W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP037N08N3 G IPP037N08N3 G-ND IPP037N08N3G SP000680776 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 14 Weeks |
Producentens varenummer: | IPP037N08N3GXKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 8110pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO-220-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 6V, 10V |
Afløb til Source Voltage (VDSS): | 80V |
Beskrivelse: | MOSFET N-CH 80V 100A TO220-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 100A (Tc) |
Email: | [email protected] |