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NTD3808N-1G
- Varenummer:
- NTD3808N-1G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 16V 12A IPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13276 Pieces
- Datablad:
- NTD3808N-1G.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I-Pak |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 15A, 10V |
| Power Dissipation (Max): | 1.3W (Ta), 52W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | NTD3808N-1G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1660pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 16V 12A (Ta), 76A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-Pak |
| Afløb til Source Voltage (VDSS): | 16V |
| Beskrivelse: | MOSFET N-CH 16V 12A IPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12A (Ta), 76A (Tc) |
| Email: | [email protected] |
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