Købe NTD3817N-35G med BYCHPS
Køb med garanti
NTD3817N-35G
- Varenummer:
- NTD3817N-35G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 16V 7.6A IPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16593 Pieces
- Datablad:
- NTD3817N-35G.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for NTD3817N-35G, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til NTD3817N-35G via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I-Pak |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 13.9 mOhm @ 15A, 10V |
| Power Dissipation (Max): | 1.2W (Ta), 25.9W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Stub Leads, IPak |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | NTD3817N-35G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 702pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 16V 7.6A (Ta), 34.5A (Tc) 1.2W (Ta), 25.9W (Tc) Through Hole I-Pak |
| Afløb til Source Voltage (VDSS): | 16V |
| Beskrivelse: | MOSFET N-CH 16V 7.6A IPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.6A (Ta), 34.5A (Tc) |
| Email: | [email protected] |
Relaterede dele til NTD3817N-35G
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
DMP3098L-7 | Diodes Incorporated | MOSFET P-CH 30V 3.8A SOT23-3 | Forespørgsel |
 |
AUIRFR3504TRL | Infineon Technologies | MOSFET N-CH 40V 87A DPAK | Forespørgsel |
 |
NTD3813N-35G | ON Semiconductor | MOSFET N-CH 16V 9.6A IPAK | Forespørgsel |
 |
NTD3817NT4G | ON Semiconductor | MOSFET N-CH 16V 7.6A DPAK | Forespørgsel |
 |
NTD3817N-1G | ON Semiconductor | MOSFET N-CH 16V 7.6A IPAK | Forespørgsel |
|
NTD3813N-1G | ON Semiconductor | MOSFET N-CH 16V 9.6A IPAK | Forespørgsel |
|
NTD3813NT4G | ON Semiconductor | MOSFET N-CH 16V 9.6A DPAK | Forespørgsel |
 |
ZXM66N02N8TA | Diodes Incorporated | MOSFET N-CH 20V 9A 8-SOIC | Forespørgsel |
|
NTD3808N-1G | ON Semiconductor | MOSFET N-CH 16V 12A IPAK | Forespørgsel |
|
NTD3808NT4G | ON Semiconductor | MOSFET N-CH 16V 12A DPAK | Forespørgsel |
|
NTD3808N-35G | ON Semiconductor | MOSFET N-CH 16V 12A IPAK | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog