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SIA850DJ-T1-GE3
- Varenummer:
- SIA850DJ-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 190V 0.95A SC70-6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15444 Pieces
- Datablad:
- SIA850DJ-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SIA850DJ-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SIA850DJ-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 1.4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerPAK® SC-70-6 Dual |
| Serie: | LITTLE FOOT® |
| Rds On (Max) @ Id, Vgs: | 3.8 Ohm @ 360mA, 4.5V |
| Power Dissipation (Max): | 1.9W (Ta), 7W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | PowerPAK® SC-70-6 Dual |
| Andre navne: | SIA850DJ-T1-GE3-ND SIA850DJ-T1-GE3TR SIA850DJT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SIA850DJ-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 90pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | Schottky Diode (Isolated) |
| Udvidet beskrivelse: | N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual |
| Afløb til Source Voltage (VDSS): | 190V |
| Beskrivelse: | MOSFET N-CH 190V 0.95A SC70-6 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 950mA (Tc) |
| Email: | [email protected] |
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